Featuring GaN (Gallium Nitride) technology, these chargers offer faster charging speeds, reduced heat generation, and a more ...

Solid State Physics Laboratory a DRDO laboratory has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide ...

A new colloidal thermal interface material (TIM) promises to significantly outperform commercially available liquid metals ...

The Indian and Sri Lankan Coast Guards held a high-level meeting in Colombo to enhance regional maritime safety and security. This meeting focused on addressing challenges like drug trafficking and ...

wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) up to 150W. A statement from the Ministry of Defence stated that these advancements also include Monolithic ...

The stock remained volatile throughout the year with a 22 % decline during the year. Navitas Semiconductor develops ...

Wolfspeed (NYSE:WOLF – Free Report) had its price objective cut by Susquehanna from $16.00 to $11.00 in a report issued on ...

Looking further ahead, Martinovic expects microLEDs, including those he is helping to pioneer, to penetrate the automotive industry, due to their high level of robustness. MicroLEDs may also take ...

Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...

T he Samsung Galaxy S24 Ultra is an early contender for smartphone of the year already, and it can do so much on its own. But ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.